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SYT8OSFP-DR8-LPO Price:¥ PN:800G OSFP-DR8 LPO Country of Origin:China

1310nm 500m

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Detailed content Specification parameter Product packaging

Product Features:

Connect the new 800G site to the existing 400G site via 2x400G breakouts

Built-in Broadcom 7nm DSP chip, the maximum power consumption is 16.5W

The self-developed 53G EML laser chip ensures production safety

Parametric testing ensures excellent performance, quality and reliability

The high-speed connection complies with IEEE 802.3ck standards and IEEE 802.3cu-2021

Hot-swappable OSFP MSA compliant

Supports 2x400G or 8x100G breakouts for higher port density

8x106.25G PAM4 retiming 800GAUI-8 electrical interface


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Blister Packaging

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